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Ga₂O₃ devices: Unlocking new upper limits for power semiconductor performance
As a new generation of ultra-wide bandgap semiconductor material, gallium oxide (Ga₂O₃) demonstrates unique physical properties that offer unparalleled advantages over traditional materials, providing a core support for the upgrade of power devices:
Significant cost advantage: The cost of Ga₂O₃ materials and the manufacturing process is lower, and a single wafer can produce more devices.
Switching frequency is higher: Under the same specifications, the device occupies less area, has a faster switching frequency and extremely low switching loss.
Excellent stability performance: It has better high-temperature stability and consistency, with a small temperature coefficient of the device.

Strong technical strength endorsement: Comprehensive layout to build a technical barrier
As a high-tech enterprise, we have always taken technological innovation as our core competitiveness, establishing comprehensive industrial advantages:
At the team level, we have gathered internationally leading technical development teams, with core members originating from top global power device companies, bringing years of deep industry expertise and extensive "Know-How" to provide solid support for research.
At the research level, we have achieved full-chain integration covering market research, design, process, packaging, testing, and application. In October 2025, we successfully completed the fabrication of the first 2-inch scientific-grade Ga₂O₃ diode wafer, achieving performance of 750V/2A.
At the policy level, the company has been selected into Hangzhou's "HaiChuang Future" leading talent program. Our robust technical capabilities have earned dual recognition from capital and government, injecting strong momentum into industrialization.

Comprehensive deep adaptation: Empowering the green upgrade of industries
Relying on the high-performance advantages of gallium oxide devices, it can provide core component support for the upgrade of power electronic equipment. It can be applied to:
Power conversion field: μDCDC module, server power supply, photovoltaic auxiliary power supply;
Transportation and Energy Field: High-power DC charging module, on-board auxiliary power supply, main drive inverter, OBC;
Industrial and household appliances sector: Industrial motors, HVAC (Heating, Ventilation, and Air Conditioning), etc.
优势
Advantage
The pioneer of the new Ga₂O₃ devices.
√ Better price advantage
Gallium oxide materials and processes have lower costs and can produce more devices per wafer;
√ Faster switching frequency
Devices of the same specification use a smaller area and have lower switching losses;
√ Better high-temperature stability and consistency
The thermal stability of gallium oxide material is better, and the temperature coefficient of the device is smaller.